CCD solid state imager

Details CCD solid state imager CCD solid state imager

1992-02-12

1994-04-26

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257436, 257233, 257294, 2502081, H01L 2714

Patent

active

053069269

ABSTRACT:
A flattened layer (6) formed between a micro-condenser lens (7) and an Al light-shielding layer (5) is formed as a bilayer and this bilayer is formed by sequentially laminating a first layer (6a) and a second layer (6b) having a refractive index (N.sub.2) lower than a refractive index (N.sub.1) of the first layer (6a). Therefore, of the incident light converged by the micro-condenser lens (7), a light component shielded by the shoulder portion of the Al light-shielding layer (5) is reduced and a sensitivity increasing effect, which is an effect inherent in the condenser lens, can be demonstrated sufficiently, which can make the CCD solid state imager compact in size and which can improve the image quality.

REFERENCES:
patent: 4588261 (1986-05-01), Erhardt
patent: 4694185 (1987-09-01), Weiss
patent: 4814848 (1989-03-01), Akimoto et al.
patent: 4901153 (1990-02-01), Machida et al.
patent: 5118924 (1992-06-01), Mehra et al.
patent: 5172206 (1992-12-01), Iizuka
patent: 5225935 (1993-07-01), Watanabe et al.
Abe et al., "A CCD Imager with SiO.sub.2 Exmposed Photosenser Arrays", IEDM, Dec. 1977, pp. 542-544.

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