Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1995-06-05
1996-12-03
Tran, Minhloan
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257227, 257232, 257233, 257242, 257291, 257411, 257461, H01L 27148, H01L 29768
Patent
active
055810993
ABSTRACT:
In a CCD solid state image sensing device in which a photosensitive section is constructed by a photodiode formed by a PN junction between a first P-type well region and an N-type impurity diffusion region formed on an N-type silicon substrate, the N-type impurity diffusion region is formed by the ion implantation of single substance of arsenic (As). According to this CCD solid state image sensing device, a bright flaw on an image sensing screen, which is one of the defects encountered with an image sensing screen, can be reduced. Also, the n-type impurity diffusion region constructing the PN Junction can be reduced in size and the CCD solid state image sensing device itself can be made compact in size. Further, a method of manufacturing a CCD solid state image sensing device also is provided.
REFERENCES:
patent: 5189499 (1993-02-01), Izumi et al.
Koch, "Charge-Injection Device with CCD Readout", IEEE Jour. of Sol. Stat. Cir., vol. SC-14, No. 3, Jun. 1979.
Abe Hideshi
Asai Atsushi
Izumi Akio
Kanbe Hideo
Kusaka Takahisa
Sony Corporation
Tran Minhloan
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