CCD shift register with improved reading device

Details CCD shift register with improved reading device CCD shift register with improved reading device

1993-12-21

1995-06-06

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257240, 257249, H01L 2978

Patent

active

054225035

ABSTRACT:
A CCD shift register having a reading device, or charge/voltage conversion device, at one end. This reading device or charge/voltage conversion device includes a diode, a precharging transistor, and an amplifier with high input impedance. To improve the efficiency of the charge transfer and, more generally, the behavior of the register, especially at high frequencies, it is proposed to shape the final gate of the register, and the diode, in such a way that the width along which the gate is adjacent to the diode (i.e. the width along which the end of the channel is adjacent to the diode) is great while, at the same time, the diode surface area is kept small.

REFERENCES:
patent: 4403237 (1983-09-01), Ohkubo et al.
patent: 5173757 (1992-12-01), Miwada

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