CCD shift register having a plurality of storage regions and tra

Details CCD shift register having a plurality of storage regions and tra CCD shift register having a plurality of storage regions and tra

1992-05-13

1994-02-22

Ngo, Ngan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257218, 257220, 257221, 257233, 257248, 348311, H01L 2978, H01L 2714, H01L 3100

Patent

active

052890228

ABSTRACT:
A CCD shift register which is improved in the transfer efficiency with a minimal decrease in the amount of electric charge that can be handled. The CCD shift register has an array of transfer electrodes, each comprising a pair of storage and transfer gate electrodes, which are formed on a semiconductor substrate through a gate insulator. A semiconductor region under each storage gate electrode is divided into a plurality of subregions by using impurities.

REFERENCES:
patent: 4087832 (1978-05-01), Jambotkar
patent: 4965648 (1990-10-01), Yang et al.
patent: 4992842 (1991-02-01), Yang et al.
patent: 5065203 (1991-11-01), Yang et al.

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