CCD read only memory

Electrical pulse counters – pulse dividers – or shift registers: c – Counting or dividing in incremental steps – Beam type tube

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

377 60, H01L 2978, G11C 1928

Patent

active

049030973

ABSTRACT:
The specification describes a high capacity nonvolatile CCD read only memory system that includes a plurality of memory cells. Selected ones of the memory cells include a double-diffused region having a first and second implant or diffusion under a clocked electrode whereby the first implant or diffusion provides a fixed charge required for ROM operation and the charge and polarity of said second implant or diffusion provides a neutralizing effect on the surface potential under the clocked electrode and above the double implanted or double diffused region.

REFERENCES:
patent: 3654499 (1972-04-01), Smith
patent: 3740732 (1973-06-01), Frandon
patent: 3852800 (1974-12-01), Ohwada et al.
patent: 4047215 (1977-09-01), Frye et al.
patent: 4060738 (1977-11-01), Tasch et al.
patent: 4072977 (1978-02-01), Bate et al.
patent: 4112575 (1978-09-01), Fu et al.
patent: 4164751 (1979-08-01), Tasch et al.
patent: 4215357 (1980-07-01), Kohyama et al.
D. Frohman & Bentchowsky, "The Metal-Nitride-Oxide-Silicon (MNOS) Transistor-Characteristics and Applications," Proceedings of the IEEE, vol. 58, No. 8, Aug. 1970, pp. 1207-1219.
D. Frohman & Bentchowsky, "A Fully Decoded 2048-Bit Electrically Programmable FAMOS Read-Only Memory," IEEE Journal of Solid-State Circuits, vol. SC-6, No. 5, Oct. 1971, pp. 301-306.
K. Goser & K. Knauer, "Nonvolatile CCD Memory with MNOS Storage Capacitors," IEEE Journal of Solid State Circuits, vol. SC-9, No. 3, Jun. 1974, pp. 148-150.
Y. T. Chan et al, "Charge-Coupled Memory Device," Applied Physics Letters, vol. 22, No. 12, 15 Jun. 1973, pp. 650-652.
Marvin H. White et al, "A Nonvolatile Charge-Addressed Memory (NOVCAM) Cell", IEEE Journal of Solid-State Circuits, vol. SC-10, No. 5, Oct. 1975, pp. 281-287.
Sequin et al, "Charge Transfer Devices", Academic Press, New York 1975, pp. 39-61.
J. Grinberg et al, "Liquid Crystal Electro-Optical Modulators for Optical Processing of Two-Dimensional Data", SPIE vol. 128, Effective Utilization of Optics in Radar Systems, 1977, pp. 253-266.
J. McKenna et al, "Design Considerations for a Two-Phase, Buried Channel, Charge-Coupled Device", The Bell System Tech. Journal, pp. 1581-1597, vol. 53, No. 8, Oct. 1974.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

CCD read only memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with CCD read only memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CCD read only memory will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1619848

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.