CCD output circuit using thin film transistor

Details CCD output circuit using thin film transistor CCD output circuit using thin film transistor

1977-05-12

1979-01-02

Larkins, William D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 4, 357 23, 357 24, 357 59, G11C 1928, H01L 2978, H01L 4902, H01L 2904

Patent

active

041329031

ABSTRACT:
Compact, low-capacitance output circuit for charge coupled device (CCD). The circuit includes a semiconductor electrode which is doped at opposite edges thereof to form the source and drain regions, respectively, of a thin film transistor. The conduction channel of the transistor is the region of the semiconductor electrode between the source and drain regions. The gate electrode of the transistor is the region of the substrate adjacent to the conduction channel and the input signals comprise the packets of charge shifted to this substrate region by the multiple phase voltages which operate the CCD.

REFERENCES:
patent: 3623132 (1971-11-01), Green
patent: 3918070 (1975-11-01), Shannon
patent: 3943545 (1976-03-01), Kim

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