Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1977-07-11
1978-02-07
Miller, Jr., Stanley D.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307221D, 307304, H01L 2978
Patent
active
040729788
ABSTRACT:
MOSFET structures are frequently used to establish the charge level in the first potential well of a CCD in accordance with an external voltage. When employed conventionally there exists a finite amount of charge under the MOSFET gate at the instant of turnoff. An indeterminate amount of this charge flows into the first potential well thereby giving rise to an uncertainty in the amount of charge in the well. Use of the invention disclosed eliminates this source of uncertainty.
REFERENCES:
patent: 3755793 (1973-08-01), Ho et al.
patent: 3760202 (1973-09-01), Kosonocky
patent: 3789267 (1974-01-01), Krambeck et al.
patent: 3986198 (1976-10-01), Kosonocky
R. Krambeck et al, "A Doped Surface Two-Phase CCD," Bell Sys. Tech. J., vol. 51 #8, Oct. 1973, pp. 1849-1866.
Barton James B.
Buss Dennis D.
Emmons Stephen P.
Clawson Jr. Joseph E.
Comfort James T.
Fassbender Charles J.
Miller, Jr. Stanley D.
Texas Instruments Incorporated
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