Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system
Patent
1987-03-27
1989-01-17
Munson, Gene M.
Radiant energy
Invisible radiant energy responsive electric signalling
Semiconductor system
25037009, 357 24, 357 30, 357 55, 365114, G01T 124, H01L 2978, H01L 2714, G11C 1134
Patent
active
047989580
ABSTRACT:
A method for promoting quantum efficiency (QE) of a CCD imaging sensor for UV, far UV and low energy x-ray wavelengths by overthinning the back side beyond the interface between the substrate and the photosensitive semiconductor material, and flooding the back side with UV prior to using the sensor for imaging. This UV flooding promotes an accumulation layer of positive states in the oxide film over the thinned sensor to greatly increase QE for either frontside or backside illumination. A permanent or semipermanent image (analog information) may be stored in a frontside SiO.sub.2 layer over the photosensitive semiconductor material using implanted ions for a permanent storage and intense photon radiation for a semipermanent storage. To read out this stored information, the gate potential of the CCD is biased more negative than that used for normal imaging, and excess charge current thus produced through the oxide is integrated in the pixel wells for subsequent readout by charge transfer from well to well in the usual manner.
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Bhatia et al, "Irradiation Technique for Making Single Electrode Charge-Coupled Storage Cell", IBM Tech. Disclosure Bulletin, vol. 15 (8/72), pp. 723-724.
Elliott Stythe T.
Janesick James R.
California Institute of Technology
Munson Gene M.
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