Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2007-09-04
2007-09-04
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S246000, C257S247000, C257S248000, C257S249000
Reexamination Certificate
active
09942835
ABSTRACT:
An optical sensor circuit for generating signals corresponding to received photoelectrons is formed on a single monolithic substrate and includes a charge coupled device (CCD) array. The array is formed of a plurality of pixels constructed by a standard CMOS process. Each pixel is formed of at least one charge well of minority carriers and a gate oxide layer overlaying the at least one charge well. At least two spaced gate electrodes corresponding in position to the at least two charge wells overlays the gate oxide layer. The space between adjacent electrodes defines a gap to transfer charge between adjacent ones of at the least two spaced gate electrodes and the gap is stabilized. A back-illuminated imager is also described in which photocarriers are diverted from devices integrated with the pixel by a PN junction formed in the pixel structure.
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Dosluoglu Taner
Levine Peter Alan
McCaffrey Nathaniel Joseph
Swain Pradyumna Kumar
Tower John Robertson
Crane Sara
Gebremariam Samuel A.
Lowenstein & Sandler PC
Sarnoff Corporation
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