CCD image sensor with vertical overflow drain

Details CCD image sensor with vertical overflow drain CCD image sensor with vertical overflow drain

1989-10-23

1990-12-11

Munson, Gene M.

Electrical pulse counters, pulse dividers, or shift registers: c

Charge transfer device

Compensating for or preventing signal charge deterioration

357 24, 35821319, G11C 1928, H01L 2978, H04N 314

Patent

active

049775847

ABSTRACT:
An image sensor is fabricated on an n type silicon substrate haivng a p type well overlain by a photo shield plate, and photo diodes are formed in the p type well and exposed through an opening in the photo shield plate to an optical image, in which the silicon substrate and the photo shield plate are biased so that punch through phenomena take place between the silicon substrate and the photo diodes for sweeping ineffectual electric charges into the substrate, thereby achieving an electronic shutter mode of operating without any complicate impurity profiles.

REFERENCES:
patent: 3896485 (1975-07-01), Early
patent: 4717945 (1988-01-01), Yusa et al.
patent: 4884142 (1989-11-01), Suzuki
patent: 4912560 (1990-03-01), Osawa et al.

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