CCD image sensor with stacked charge transfer gate structure

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device

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257250, 257758, H01L 27148, H01L 29765

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active

055064299

ABSTRACT:
A CCD imager has an array of rows and columns of picture elements on a semiconductor substrate. A vertical charge transfer gate section extends in a first direction on the substrate to be associated with the columns. The transfer gate section includes CCD channels in the substrate, and insulated transfer gate electrodes overlying these CCD channels. A plurality of buffer electrodes are formed at a first level over the substrate surface to overlie the transfer gate electrodes. A plurality of shunt wires are formed at a second level over the substrate surface to overlie the buffer electrodes. The charge transfer gate electrodes and the buffer electrodes are connected with each other by first contact holes. The buffer electrodes and the shunt wires are coupled together by second contact holes. The second contact holes are distributed so that the repeat period thereof as defined at least in a second direction transverse to the first direction on the substrate is equal to or less than two picture elements, whereby their spatial frequency at least in the second direction is half the sampling frequency of photoconversion in the CCD imager, or more.

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patent: 4847692 (1989-07-01), Tabei
patent: 5073808 (1991-12-01), Kinoshita
patent: 5250825 (1993-10-01), Negishi et al.
patent: 5256890 (1993-10-01), Furukawa et al.
Kazuya Yonemoto et al., ISSCC Digest of Technical Papers; (Feb. 1990), pp. 214-215.
Toshihida Nobusada et al., ISSCC Digest of Technical Papers; (Feb. 1989), pp. 88-89.
"Frame Interline Transfer CCD Sensor for HDTV Camera", T. Nobusada et al., 1989 IEEE International Solid-State Circuits Conference, pp. 88 & 89.
"A 2 Million Pixel FIT-CCD Image Sensor for HDTV Camera System", K. Yonemoto et al., 1990 IEEE International Solid-State Circuits Conference, pp. 214 & 215.

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