CCD image sensor with four phase clocking mechanism

Details CCD image sensor with four phase clocking mechanism CCD image sensor with four phase clocking mechanism

1993-03-15

1994-01-18

Ngo, Ngan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257233, 257236, 257245, 257249, 35821322, 35821326, 35821329, 35821331, H01L 2978, H01L 2714, H01L 3100

Patent

active

052801861

ABSTRACT:
An improved CCD image sensor which contains a plurality of photodetectors is provided with a transfer gate and uses a CCD as a scanner for reading signals, and having photo diodes which are connected consecutively to both the left and right sides of VCCD region and, in the parts without VCCD region, are disposed repeatedly parallel to each other separated by an interval of the width of the channel stop region. A 4 phase clock signal consisting of 4 fields is used for operation of said CCD image sensor. The resultant CCD image sensor has an increased photodetector area which can provide high resolution of video.

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