Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1993-04-14
1995-07-25
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257217, 257239, 257224, 377 60, H01L 29796, G11C 1928
Patent
active
054364760
ABSTRACT:
An image sensor element having at least one charge storage well 70 and 80, charge transfer structures for transferring charge from one charge storage well 70 to another charge storage well 80, and a charge sensor for sensing charge levels in a charge storage well 70 without removing the charge from the well.
Other devices, systems and methods are also disclosed.
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patent: 5229630 (1993-07-01), Hamasaki
Jaroslav Hynecek, "Virtual Phase Technology: A New Approach to Fabrication of Large Area CCD's", IEEE Transactions on Electron Devices, vol. ED-28, No. 5, May 1981, pp. 483-489.
Jaroslav Hynecek, "BCMD-An Improved Photosite Structure for High Density Image Sensors", IEEE Transactions on Electron Devices, vol. 38, No. 5, May 1991, pp. 1011-1020.
Donaldson Richard L.
Hiller William E.
Munson Gene M.
Stewart Alan K.
Texas Instruments Incorporated
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