Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1993-07-27
1994-03-29
Ngo, Ngan
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257221, 257222, 257233, 257236, 257246, 257249, H01L 2978, H01L 2714, H01L 3100
Patent
active
052987779
ABSTRACT:
A CCD image sensor of an interlaced scanning type comprising a plurality of uniformly spaced photodetectors arranged in series in vertical and horizontal directions, a plurality of VCCD regions arranged between sets of said photodetectors arranged in the vertical directions, a plurality of channel stop regions for electrically isolating said plurality of photodetectors from one another, a plurality of gate electrodes formed on said VCCD regions, each of said plurality of gate electrodes being connected simultaneously to transfer gate electrodes of adjacent ones of said plurality of photodetectors on odd and even horizontal lines, a plurality of barrier layers, each formed at a portion of each of said VCCD regions corresponding to a boundary with each of said gate electrodes on said VCCD regions, for forming a desired potential barrier, and a HCCD region formed under said plurality of VCCD regions, for transferring signal charges from said VCCD regions to an output stage. Therefore, in accordance with the present invention, the gate electrodes can be reduced from four of the prior art to two in number, resulting in simplification in construction and manufacturing process thereof. Also, the reduction in number of the gate electrodes to two allows the driving system to be simple.
REFERENCES:
patent: 4652928 (1987-03-01), Endo
patent: 4680636 (1987-07-01), Ooi
patent: 4680637 (1987-07-01), Sugiki
patent: 5063449 (1991-11-01), Shibata
patent: 5111263 (1992-05-01), Stevens
Gold Star Electron Co. Ltd.
Ngo Ngan
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