CCD image sensor

Details CCD image sensor CCD image sensor

1993-11-18

1994-06-28

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257232, 257234, 348311, H01L 2978

Patent

active

053249682

ABSTRACT:
An image sensor having on a substrate of a first conductivity type an implanted region of a conductivity type opposite to the first conductivity type and an implanted region of the same conductivity type as the substrate, the image sensor comprising a plurality of depleted photosensitive regions in which electric charges are generated, an isolation region being formed between adjacent photosensitive regions to isolate the photosensitive regions from each other. Charge accumulation regions and transfer regions are also provided to transport the electric charges from the photosensitive regions to CCD shift registers. The isolation regions between two depleted photosensitive regions are formed of undepleted regions. The implanted region of the opposite conductivity type is of a smaller width throughout the photosensitive regions than throughout the charge accumulation regions and the transfer regions.

REFERENCES:
patent: 4744057 (1988-05-01), Descure et al.
patent: 4980735 (1990-12-01), Yamawaki
patent: 5051797 (1991-09-01), Erhardt
patent: 5066994 (1991-11-01), Erhardt
patent: 5235196 (1993-08-01), Anagnostopoulos et al.
Declerck et al, A 3456 Element Quadrilinear CCD With Depletion-Isolated Sensor Structure, IEDM Technical Digest 1983, pp. 505-508.

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