CCD image sensing device having a p-well region with a high impu

Details CCD image sensing device having a p-well region with a high impu CCD image sensing device having a p-well region with a high impu

1992-05-08

1994-03-08

Mancuso, Joseph

Television

Camera, system and detail

Solid-state image sensor

257223, 348243, 348249, H04N 5335

Patent

active

052932370

ABSTRACT:
A CCD image sensing device has vertical shift registers (22), a horizontal shift register (3A), a horizontal transfer gate (4), a horizontal shift register (3B), a smear gate (6), a smear drain region (7) and a channel stop region (8) arranged in that order on an n-type substrate (N-Sub). A p-well region underlying the vertical shift registers (22), the horizontal shift register (3A), the horizontal transfer gate (4), the horizontal shift register (3B) the smear gate (6), the smear drain region (7) and the channel stop region (8) is doped in a high impurity concentration to stabilize the potential of the p-well region at a potential substantially equal to that of the channel stop region (8), i.e., ground potential (GND). Consequently, no hole storage region is formed in the p-well and hence the deterioration of the signal transfer performance can be prevented. Since no hole-depletion region is created, no dark current due to avalanche is produced.

REFERENCES:
patent: 4467341 (1984-08-01), Suzuki
patent: 4654682 (1987-03-01), Boudewijns
patent: 4760435 (1988-07-01), Burt
patent: 4814848 (1989-03-01), Akimoto et al.
patent: 4851890 (1989-07-01), Miyatake
patent: 5057926 (1991-10-01), Watanabe
patent: 5115458 (1992-05-01), Burkey et al.
patent: 5130774 (1992-07-01), Stevens et al.
1190 IEEE International Solid-State Circuits Conference, 14 Feb. 1990, San Francisco, USA; Kazuya Yonemoto, et al., "A 2 Million Pixle Fit-CCD Image Sensor for HDTV Camera System", pp. 214-215, 299.

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