CCD having transfer electrodes of 3 layers

Details CCD having transfer electrodes of 3 layers CCD having transfer electrodes of 3 layers

1994-06-22

1995-02-28

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257233, 257241, 257250, H01L 2978, H01L 2714, H01L 3100

Patent

active

053939972

ABSTRACT:
A solid state imager device comprises a plurality of pixels arranged in rows and columns, each of the pixels consisting of a light sensing element and a vertical transfer portion adjacent to the light sensing element, the vertical transfer portion having three gate portions such as a first, a second and a third gate portions insulated each other, the third gate portion located in the center of the three gate portions, a plurality of rows of base portions disposed in the horizontal direction and connecting the respective gate portions, a vertical wiring device disposed over the gate portions through an insulating layer, the vertical wiring device including, a first wiring film connecting the first gate portions, a second wiring film connecting the second gate portions, a third wiring film connecting the third gate portions which is connected to the odd row of the base portions, a fourth wiring film connecting the third gate portions which is connected to the even rows of the base portions, a read out pulse device for supplying a read out voltage pulse to the third and fourth wiring films, and a transfer pulse device for supplying a transfer voltage pulse to the three gate portions so as to transfer signal charges in the vertical direction.

REFERENCES:
patent: 4689687 (1987-08-01), Koike et al.

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