CCD Gate electrode structures and systems employing the same

Details CCD Gate electrode structures and systems employing the same CCD Gate electrode structures and systems employing the same

1978-06-16

1980-07-08

Munson, Gene M.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307238, 357 24, 365183, G11C 1928, H03K 500, H01L 2978

Patent

active

042119367

ABSTRACT:
A gate electrode which is common to at least two CCD channels is formed with a "window" over one of the channels. A second gate electrode over the first controls the substrate potential of the one channel through the window but has no effect on the substrate potential of the other channel. The structure makes it possible to block or delay the propagation of charge in one channel relative to the other and is useful, for example, in structures for parallel-to-serial charge signal translation and vice versa.

REFERENCES:
patent: 3811055 (1974-05-01), Weimer
patent: 3873851 (1974-05-01), Weimer
patent: 3902186 (1975-08-01), Engeler et al.
patent: 3967254 (1976-06-01), Kosonocky et al.
patent: 3971003 (1976-07-01), Kosonocky
patent: 4103347 (1978-07-01), Barton
patent: 4134028 (1979-01-01), Kosonocky et al.

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