CCD frame transfer photosensitive matrix with vertical anti-bloo

Details CCD frame transfer photosensitive matrix with vertical anti-bloo CCD frame transfer photosensitive matrix with vertical anti-bloo

1989-06-19

1990-04-10

Munson, Gene M.

Facsimile and static presentation processing

Facsimile

Specific signal processing circuitry

357 30, 357 59, 357 63, 357 91, 35821319, H01L 2978

Patent

active

049165011

ABSTRACT:
The disclosed photosensitive matrix comprises, in a standard way, a P type semiconductor substrate, an N type channel layer separated by narrow insulating zones into a plurality of columns and, on a thin layer of insulating oxide placed on the channel layer, a network of transfer gates extending perpendicularly to the insulating zones, dividing the columns into a large number of "pixels". According to the invention, the matrix has, between the substrate and the channel layer, a weakly doped P type base layer, in which are buried anti-blooming diodes consisting of a narrow, strongly doped N type drain extending in a direction parallel to the insulation zones. Beneath the drain, there is a strongly doped, P type protective screen. The arrangement gives an optical aperture of the matrix close to unity and a spectral response that is improved towards the red side of the spectrum owing to the thickness of the base layer.

REFERENCES:
patent: 3896485 (1975-07-01), Early
patent: 4373167 (1983-02-01), Yamada
patent: 4467341 (1984-08-01), Suzuki
patent: 4498013 (1985-02-01), Kuroda et al
patent: 4527182 (1985-02-01), Ishihara et al.
patent: 4748486 (1988-05-01), Miyatake
patent: 4851890 (1989-07-01), Miyatake

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