Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1992-08-21
1993-10-26
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257250, 257659, 35821324, H01L 2978, H01L 2714, H01L 3100
Patent
active
052568911
ABSTRACT:
An image sensor including CCDs, a charge coupled device (CCD) or shift register. Each CCD structure is formed of a set of electrodes wherein at least one electrode of each set is formed of a connected layer of opaque conducting material.
REFERENCES:
patent: 4772565 (1988-09-01), Kamimura et al.
patent: 4774586 (1888-09-01), Koike et al.
patent: 4908684 (1990-03-01), Koike et al.
Losee David L.
Stevens Eric G.
Eastman Kodak Company
Kaufman Stephen C.
Limanek Robert
Mintel William
LandOfFree
CCD electrode structure for image sensors does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with CCD electrode structure for image sensors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CCD electrode structure for image sensors will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-961149