CCD electrode structure for image sensors

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device

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Details

257250, 257659, 35821324, H01L 2978, H01L 2714, H01L 3100

Patent

active

052568911

ABSTRACT:
An image sensor including CCDs, a charge coupled device (CCD) or shift register. Each CCD structure is formed of a set of electrodes wherein at least one electrode of each set is formed of a connected layer of opaque conducting material.

REFERENCES:
patent: 4772565 (1988-09-01), Kamimura et al.
patent: 4774586 (1888-09-01), Koike et al.
patent: 4908684 (1990-03-01), Koike et al.

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