Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1993-08-27
1994-04-26
Ngo, Ngan
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257240, 377 60, 377 62, 348250, 348304, 348311, H01L 2978
Patent
active
053069331
ABSTRACT:
A charge transfer device includes a first input stage converting a first input signal into first signal charge, a first shift register transferring the first signal charge with a first delay amount, a second input stage converting a second input signal into second signal charge and having a first switch for selectively inputting the second signal charge to a second shift register, a third input stage converting a third input signal into third signal charge and having a second switch for selectively inputting the third signal charge to a third shift register, and an adding section for selectively adding one of the second and third signal charge to the first signal charge. The second shift register transfers the second signal charge with a second delay amount and the third shift register transfers the third signal charge with a third delay amount.
REFERENCES:
patent: 4199691 (1980-04-01), Angle
patent: 4387389 (1983-06-01), Tanigawa
patent: 4443774 (1984-04-01), Luder et al.
Kondo Tetsuya
Sato Maki
Ngo Ngan
Sony Corporation
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