cBN semiconductor device having an ohmic electrode and a method

Details cBN semiconductor device having an ohmic electrode and a method cBN semiconductor device having an ohmic electrode and a method

1993-09-22

1995-05-09

Larkins, William D.

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

257745, 257763, H01L 2348, H01L 2946, H01L 2962, H01L 2964

Patent

active

054142792

ABSTRACT:
An ohmic electrode is formed on a cBN crystal to form a cBN semiconductor device which is used as a solid electronic element. The cBN semiconductor device may be of an n-type, a p-type or a pn junction type wherein molybdenum is deposited onto an n-type doped region of the cBN crystal or platinum is deposited onto a p-type doped region to thereby form an electrode with ohmic characteristic. The deposition of the molybdenum or the platinum is conducted by using a vapor deposition method followed by heating the attached substance at a temperature of 300.degree. C.-1100.degree. C. in an inactive gas atmosphere. The cBN semiconductor device can be used as a solid electronic element or an optoelectronic element for rectifiers, transistors, light emitting diodes and so on and integrated elements thereof.

REFERENCES:
patent: 5057454 (1991-10-01), Yoshida et al.
patent: 5187560 (1993-02-01), Yoshida et al.

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