Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With pretreatment or preparation of a base
Patent
1996-08-05
1998-11-03
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With pretreatment or preparation of a base
117105, 117108, 117947, 427255, C30B 2514
Patent
active
058302700
ABSTRACT:
A structure including a film of a desired perovskite oxide which overlies and is fully commensurate with the material surface of a semiconductor-based substrate and an associated process for constructing the structure involves the build up of an interfacial template film of perovskite between the material surface and the desired perovskite film. The lattice parameters of the material surface and the perovskite of the template film are taken into account so that during the growth of the perovskite template film upon the material surface, the orientation of the perovskite of the template is rotated 45.degree. with respect to the orientation of the underlying material surface and thereby effects a transition in the lattice structure from fcc (of the semiconductor-based material) to the simple cubic lattice structure of perovskite while the fully commensurate periodicity between the perovskite template film and the underlying material surface is maintained. The film-growth techniques of the invention can be used to fabricate solid state electrical components wherein a perovskite film is built up upon a semiconductor-based material and the perovskite film is adapted to exhibit ferroelectric, piezoelectric, pyroelectric, electro-optic or large dielectric properties during use of the component.
REFERENCES:
patent: 5084265 (1992-01-01), Harada et al.
patent: 5225031 (1993-07-01), McKee et al.
patent: 5270231 (1993-12-01), Sameshima
patent: 5323023 (1994-06-01), Fork
patent: 5330931 (1994-07-01), Emesh et al.
patent: 5378905 (1995-01-01), Nakamura
patent: 5382539 (1995-01-01), Nakamura
patent: 5432015 (1995-07-01), Wu et al.
patent: 5496597 (1996-03-01), Soininen et al.
Ligima et al., "Atomic Layer Growth of Oxide Thin Films With Provskile-type Structure by Reactive Evaporation," J. Appl. Phys 72(7) Oct. 1, 1992 pp. 2840-2845.
Tsuremi et al, "Fabrication of Borum Titanate/Strention Titanake Artifical Supperlattice by Atomic Layer Epitaxy" Jpn. J. Appl. Phys. vol. 33 (1994) pp. 5192-5195.
Robert M. Hazen, "Perovskites", Scientific American, pp. 74-81, Jun. 1988.
McKee Rodney Allen
Walker Frederick Joseph
Kunemund Robert
Lockheed Martin Energy Systems, Inc.
McKee Michael E.
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