Cathode structure for reduced emission and robust handling prope

Details Cathode structure for reduced emission and robust handling prope Cathode structure for reduced emission and robust handling prope

1996-11-21

1998-08-04

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Low workfunction layer for electron emission

257 11, 313374, 313366, 313384, H01L 2906, H01L 2912

Patent

active

057897590

ABSTRACT:
A photocathode device for use in an image intensifier, fabricated with a photoemissive semiconductor wafer having an active cathode layer which includes a central region of a first predetermined height surrounded by a peripheral region of a second predetermined height. The first predetermined height of the central region is configured to be greater than the second predetermined height of the peripheral region in order to create a recessed contact structure which is less likely to have unwanted emission points. A layer of conductive material covers the peripheral region to provide an electrical contact to the photocathode device. A layer of insulating material covers the layer of conductive material in order to protect the contact layer from being damage during handling operations.

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