Cathode sputtering system with axial gas distribution

Details Cathode sputtering system with axial gas distribution Cathode sputtering system with axial gas distribution

1992-04-02

1993-07-20

Nguyen, Nam X.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20419212, 20429811, C23C 1434

Patent

active

052289680

ABSTRACT:
A gas inlet (3), a substrate holder (10) with a substrate (11) and a gas outlet (5) are located on a common axis (4) in the vacuum casing (I) of a cathode sputtering system. This results in a symmetrical flow inside the cathode station (2) and a concentric uniformity of the gas pressure. These conditions result in a particularly even coating of the substrate (11) by means of sputtering.

REFERENCES:
patent: 4006070 (1977-02-01), King et al.
patent: 4183197 (1980-01-01), Kennedy et al.
patent: 4412906 (1983-11-01), Sato et al.
patent: 4558388 (1985-12-01), Graves, Jr.
patent: 4572842 (1986-02-01), Dietrich et al.
patent: 4715319 (1987-12-01), Bringmann et al.
patent: 4871434 (1989-10-01), Munz et al.
patent: 4931169 (1990-06-01), Scherer et al.
patent: 4946576 (1990-08-01), Dietrich et al.
patent: 4988422 (1991-01-01), Wirz

Affiliated with

Also associated with

Rating

Cathode sputtering system with axial gas distribution does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Cathode sputtering system with axial gas distribution, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Cathode sputtering system with axial gas distribution will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1758051