Cathode sputtering method for the manufacture of etched structur

Details Cathode sputtering method for the manufacture of etched structur Cathode sputtering method for the manufacture of etched structur

1976-06-07

1977-09-20

Mack, John H.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

204192EC, C23C 1500

Patent

active

040495213

ABSTRACT:
In usual practice, cathodically etched structures typically show either non-etched parts (strong readsorption of sputtered material) or the etched structure shows strong grooves at the edges of the etching mask (strong back-diffusion of sputtered material). With a variation of the working gas pressure an adjustability of the average free path length of the atoms of the sputtered material and hence the adjustability of the quantity of material redeposited on the basis of back-diffusion is obtained. The working gas pressure can hence be adjusted so that the etching time to remove the readsorbed material and the material deposited again by back-diffusion is locally constant and equal etching rates are obtained for all areas of the structure to be etched.

REFERENCES:
patent: 3816198 (1974-06-01), La Combe et al.
G. N. Jackson, "R.F. Sputtering", Thin Solid Films, vol. 5, pp. 236-239 (1970).
J. L. Vossen et al., "Back Scattering of Material Emitted from RF-Sputtering Targets", RCA Review, vol. 31, pp. 293-305 (1970).

Affiliated with

Also associated with

Rating

Cathode sputtering method for the manufacture of etched structur does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Cathode sputtering method for the manufacture of etched structur, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Cathode sputtering method for the manufacture of etched structur will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-669679