Cathode-sputtering apparatus comprising a device for measuring c

Details Cathode-sputtering apparatus comprising a device for measuring c Cathode-sputtering apparatus comprising a device for measuring c

1993-05-05

1995-01-10

Niebling, John

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20419213, C23C 1434

Patent

active

053804198

ABSTRACT:
A cathode-sputtering apparatus for the surface-coating of objects has a vacuum chamber which contains a helium-group gas, in which chamber a target cathode and an anode are arranged. A voltage for producing plasma discharges is applied to these electrodes and a magnetic field is applied, which intensifies the plasma discharges and concentrates them at the location of the target cathode. For measuring a critical target-consumption condition, at least one probe is provided in the target cathode, which probe is actuated when the target material is eroded up to the probe.

REFERENCES:
patent: 4324631 (1982-04-01), Meckel et al.
patent: 4374722 (1983-02-01), Zega
patent: 4379040 (1983-04-01), Gillery
patent: 4407708 (1983-10-01), Landau
patent: 4426264 (1984-01-01), Munz et al.
patent: 4545882 (1985-10-01), McKelvey
J. L. Vossen et al., Thin Film Processes, Academic Press, New York, 1978, pp. 14-33.

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