Cathode ray tube comprising a semiconductor cathode

Details Cathode ray tube comprising a semiconductor cathode Cathode ray tube comprising a semiconductor cathode

1995-03-21

2000-10-31

Crane, Sara

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Low workfunction layer for electron emission

313366, H01L 2912

Patent

active

061406643

ABSTRACT:
To prevent breakdown of an insulating layer located underneath a gate electrode, the gate electrode is connected to an external terminal via a high-ohmic resistor. The high-ohmic resistor may form part of a resistive network for biasing voltages for a plurality of gate electrodes. The resistive network may be realised partly on the insulating layer.

REFERENCES:
patent: 4019082 (1977-04-01), Olsen et al.
patent: 4259678 (1981-03-01), Van Gorkom et al.
patent: 4303930 (1981-12-01), Van Gorkom et al.
patent: 4682074 (1987-07-01), Hoeberechts et al.

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