Cathode for gunn diode and gunn diode comprising such a cathode

Details Cathode for gunn diode and gunn diode comprising such a cathode Cathode for gunn diode and gunn diode comprising such a cathode

1975-11-28

1977-02-01

Larkins, William D.

357 2, 357 6, H01L 4702

Patent

active

040064905

ABSTRACT:
A Gunn diode comprises deposited in succession on the active zone of gallium arsenide of type N: a first layer of the same material having the same type of conductivity but very strongly doped, and a second layer of amorphous germanium in which is developed a tunnel effect. A metallic deposit covering this second layer serves as cathode contact.

REFERENCES:
patent: 3600705 (1971-08-01), Tantraporn et al.
patent: 3836990 (1974-09-01), Harth
LeComber et al., Electronic and Structural Properties of Amorphous Semiconductors, Academic Press, N.Y., 1973, pp. 104-105.
Milnes et al., Heterojunctions and Metal Semiconductor Junctions, Academic Press, N.Y., 1972, p. 299.

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