Cathode for etching

Details Cathode for etching Cathode for etching

1981-05-11

1982-09-21

O'Keefe, Veronica

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

204192D, 204192E, 204298, C23C 1500

Patent

active

043505783

ABSTRACT:
A cathode for reactive ion etching is provided which improves the etch rate and the uniformity of etching on the object etched. The cathode has a quartz plate with a series of recesses having disks therein of the same material as the object to be etched and a ring of that same material around the outer edge of the plate. In a preferred embodiment a cathode for etching silicon wafers has silicon disks recessed in a quartz plate at each wafer holding position and a ring of silicon around the outer edge of the plate.

REFERENCES:
patent: 4153528 (1979-05-01), Dykeman et al.
IBM Technical Disclosure Bulletin, vol. 18, No. 3, Aug. 1975, p. 810; and vol. 19, No. 10, Mar. 1977, p. 3854.

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