Cathode arrangement for sputtering material from a target in a c

Details Cathode arrangement for sputtering material from a target in a c Cathode arrangement for sputtering material from a target in a c

1981-10-30

1984-05-15

Demers, Arthur P.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

204192R, C23C 1500

Patent

active

044486537

ABSTRACT:
A cathode arrangement for sputtering material from a target in a cathode sputtering unit comprises a frame-shape magnet disposed adjacent the target and remote from the surface to be sputtered and another magnet located within the frame-shape magnet. The directions of magnetization of the two magnets form an angle of from 45 to 90 degrees. The frame-shape magnet is made of a permanent magnet material having an energy density of at least 40 kJ per m.sup.3. The other magnet is made of a permanent magnet material having an energy density of less than 40 kJ per m.sup.3.

REFERENCES:
patent: 4162954 (1979-07-01), Morrison
patent: 4180450 (1979-12-01), Morrison
patent: 4198283 (1980-04-01), Class et al.
patent: 4219379 (1980-08-01), Clark
patent: 4265729 (1981-05-01), Morrison
patent: 4282083 (1981-08-01), Kertesz et al.
patent: 4391697 (1983-07-01), Morrison

Affiliated with

Also associated with

Rating

Cathode arrangement for sputtering material from a target in a c does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Cathode arrangement for sputtering material from a target in a c, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Cathode arrangement for sputtering material from a target in a c will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-843684