Catalytic breakdown of reactant gases in chemical vapor depositi

Details Catalytic breakdown of reactant gases in chemical vapor depositi Catalytic breakdown of reactant gases in chemical vapor depositi

1996-09-10

2000-03-21

Beek, Sheine

Coating processes

Coating by vapor, gas, or smoke

Metal coating

427253, 42725511, 42725528, 42725539, C23C 1606, C23C 1608

Patent

active

060400102

ABSTRACT:
Methods and apparatus for depositing films on semiconductor wafers in chemical vapor deposition processes employing a catalyst to provide one or more activated gases to reduce the surface temperature of the semiconductor wafer needed to form the film thereon. The activated gas precursors can include hydrogen or hydrogen-bearing gases. The catalysts can be selected from ruthenium, rhodium, palladium, osmium, iridium, platinum, gold, silver, mercury, rhenium, copper, tungsten, and combinations thereof.

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Matsumura, "Silicon nitride produced by catalytic chemical vapor deposition method", J. Appl. Phys. 66(8), 1989.

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