Catalytic breakdown of reactant gases in chemical vapor depositi

Details Catalytic breakdown of reactant gases in chemical vapor depositi Catalytic breakdown of reactant gases in chemical vapor depositi

1999-05-04

2000-10-17

Beck, Shrive

Coating apparatus

Gas or vapor deposition

118724, C23C 1600

Patent

active

061325147

ABSTRACT:
Methods and apparatus for depositing films on semiconductor wafers in chemical vapor deposition processes employing a catalyst to provide one or more activated gases to reduce the surface temperature of the semiconductor wafer needed to form the film thereon. The activated gas precursors can include hydrogen or hydrogen-bearing gases. The catalysts can be selected from ruthenium, rhodium, palladium, osmium, iridium, platinum, gold, silver, mercury, rhenium, copper, tungsten, and combinations thereof.

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