Catalytic acceleration and electrical bias control of CMP proces

Details Catalytic acceleration and electrical bias control of CMP proces Catalytic acceleration and electrical bias control of CMP proces

1996-05-23

1999-09-07

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438691, 438692, 156345, H01L 21302

Patent

active

059486970

ABSTRACT:
A slurry for chemical-mechanical polishing comprises a high pH solution with particles of a catalyst mixed with the high pH solution for accelerating the polishing rate. The catalyst preferably is a metal selected from the group consisting of platinum, silver, palladium, copper, rhodium, nickel, and iron. The catalyst may be impregnated into a polishing pad used to apply the slurry to a surface. A CMP process for metal surfaces includes applying a slurry to a metal surface to be polished, and providing an electrical bias to the workpiece and to the slurry for controlling the polishing rate. The electrical bias is provided to dies in the workpiece by means of an electrical connection between a bias voltage source and scribe lines between adjacent dies.

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