Catalyst-free growth of single-wall carbon nanotubes

Details Catalyst-free growth of single-wall carbon nanotubes Catalyst-free growth of single-wall carbon nanotubes

2005-01-18

2005-01-18

Hitesherw, Felisa (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having moving solid-liquid-solid region

C117S084000, C117S092000

Reexamination Certificate

active

06843850

ABSTRACT:
A method for growing single-walled nanotubes comprises providing a silicon carbide semiconductor wafer comprising a silicon face and a carbon face, and annealing the silicon carbide semiconductor wafer in a vacuum at a temperature of at least about 1300 degrees Celsius, inducing formation of single wall carbon nanotubes on the silicon face.

REFERENCES:
patent: 6250984 (2001-06-01), Jin et al.
patent: 6630722 (2003-10-01), Aoki
M. Kusunoki et al.,A Formation Mechanism of Carbon Nanotube Films on SiC(0001), Applied Physics Letters, vol. 77, No. 4, Jul. 24, 2000, pp. 531-533.

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