Semiconductor device manufacturing: process – Having organic semiconductive component
Reexamination Certificate
2011-06-21
2011-06-21
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Having organic semiconductive component
C257S040000, C257SE51024, C257SE51027, C257SE51046, C427S096800
Reexamination Certificate
active
07964441
ABSTRACT:
A method is provided for low temperature catalyst-assisted atomic layer deposition of silicon-containing films such as SiO2and SiN. The method includes exposing a substrate surface containing X—H functional groups to a first R1—X—R2catalyst and a gas containing silicon and chlorine to form an X/silicon/chlorine complex on the surface, and forming a silicon-X layer terminated with the X—H functional groups by exposing the X/silicon/chlorine complex on the substrate surface to a second R1—X—R2catalyst and a X—H functional group precursor. The method further includes one or more integrated in-situ reactive treatments that reduce or eliminate the need for undesired high-temperature post-deposition processing. One reactive treatment includes hydrogenating unreacted X—H functional groups and removing carbon and chlorine impurities from the substrate surface. Another reactive treatment saturates the silicon-X layer with additional X—H functional groups.
REFERENCES:
patent: 6090442 (2000-07-01), Klaus et al.
patent: 6660338 (2003-12-01), Hargreaves
patent: 6818250 (2004-11-01), George et al.
patent: 6992019 (2006-01-01), Lee et al.
patent: 2005/0271893 (2005-12-01), Kobrin et al.
patent: 2006/0090694 (2006-05-01), Cho et al.
J. Park et al., “Mass-Productive Ultra-Low Temperature ALD SiO2Process Promising for Sub-90nm Memory and Logic Devices”, Electronic Devices Meeting, IEDM 2002, pp. 229-232. (2002).
Y. Kim et al. “A Novel Method for Forming Gate Spacer and its Effects on the W/WNx/Poly-Si Gate Stack,” Proceedings of the 34thEuropean Solid-State Device Research Conference, pp. 97-100. (2004).
J. W. Klaus et al. “Growth of SiO2at Room Temperature with the Use of Catalyzed Sequential Half-Reactions,” Science, vol. 278, pp. 1934-1936. (1997).
Gandhi Meenakshisundaram
Joe Raymond
Landau Matthew C
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Snow Colleen E
Tokyo Electron Limited
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