Castellated gate field effect transistor

Details Castellated gate field effect transistor Castellated gate field effect transistor

1983-08-15

1986-04-15

Larkins, William D.

357 58, 357 15, 357 20, 357 55, H01L 2980, H01L 2948, H01L 2906, H01L 2936

Patent

active

045831076

ABSTRACT:
A field effect transistor is described incorporating a semiconductor layer over a layer or substrate of semi-insulating semiconductor material and a gate electrode which periodically passes through the semiconductor layer to the substrate to form a plurality of conducting bars in the semiconductor layer for transistor current and which at pinch-off confines the current interior of each conducting bar. The invention overcomes the problem of leakage current at pinch-off, thus improving the efficiency of the field effect transistor as a power amplifier.

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