Cast dopant for crystal growing

Details Cast dopant for crystal growing Cast dopant for crystal growing

1993-05-28

1995-04-18

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 21, 117911, 117932, C30B 1504, C30B 1532

Patent

active

054069050

ABSTRACT:
A dopant (76), such as antimony, is cast around a seed crystal (10) to form a seed-dopant assembly (14) that facilitates doping of a molten semiconductor (36), such as silicon, in a crystal-growing furnace (34). To grow a doped ingot, the seed-dopant assembly is held in a relatively cool part of the furnace while the semiconductor is melted. When the semiconductor melt is ready for doping, the seed-dopant assembly is lowered to a position just above the melt. Heat transferred to the seed dopant assembly from the melt causes the dopant to drop off the seed into the molten semiconductor without splashing and without immersing the seed.

REFERENCES:
patent: 5007980 (1991-04-01), Swiggard

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