Electric power conversion systems – Current conversion – Using semiconductor-type converter
Reexamination Certificate
2007-02-20
2007-02-20
Laxton, Gary L (Department: 2838)
Electric power conversion systems
Current conversion
Using semiconductor-type converter
C363S084000, C363S127000, C327S376000
Reexamination Certificate
active
11207214
ABSTRACT:
A high voltage rectifier device exhibiting low forward resistance and fast switching time formed of a high voltage structure connected in a cascode configuration with a low voltage structure. The high voltage structure is a bidirectional normally on semiconductor switch have two pairs of gate and source terminals which shuts off if either of the gate terminals is reverse biased. The low voltage structure is a diode, preferably a Schottky or barrier diode. The device is advantageously formed as an integrated circuit. With one of the terminal pairs of the switch clamped to zero volts, the device behaves as a diode, or the second terminal pair can be employed to provide the functions of a three terminal controlled rectifier. Among other possible applications are integrated circuits using four of the devices as a bridge rectifier, and as an anti-parallel diode for connection with an IGBT.
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patent: 5422563 (1995-06-01), Pflueger
patent: 6323718 (2001-11-01), Rault et al.
patent: 6483369 (2002-11-01), Wittenbreder, Jr.
V. Khemka et al., “HMS Rectifier: A Novel Hybrid Mos Schottky Diode Concept with No Barrier Lowering, Low Leakage Current and High Breakdown Voltage,” Proceedings of the 17th International Symposium on Power Semiconductor Devices & IC's, pp. 51-54, May 23-26, 2005, Santa Barbara, California.
International Rectifier Corporation
Laxton Gary L
Ostrolenk Faber Gerb & Soffen, LLP
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