Cascoded bi-directional high voltage ESD protection structure

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Device protection

Reexamination Certificate

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Details

C257S122000, C257S141000, C257S162000, C257SE29225

Reexamination Certificate

active

10734921

ABSTRACT:
In a high voltage ESD protection solution, a plurality of DIACs are connected together to define a cascaded structure with isolation regions provided to prevent n-well and p-well punch through. An p-ring surrounds the DIACs and provides a ground for the substrate in which the DIACs are formed.

REFERENCES:
patent: 4309715 (1982-01-01), MacPherson et al.
patent: 5576557 (1996-11-01), Ker et al.
patent: 6258634 (2001-07-01), Wang et al.
patent: 2005/0045909 (2005-03-01), Zhang

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