Cascode switched charge pump circuit

Oscillators – Automatic frequency stabilization using a phase or frequency... – Transistorized controls

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Details

331 17, 331 25, 327157, H03L 7089

Patent

active

054732832

ABSTRACT:
A low leakage, metal oxide semiconductor field effect transistor (MOSFET) charge pump circuit includes P- and N-MOSFET current mirrors, P- and N-MOSFET current switches and an output node. The P-MOSFET current mirror sources an output current which is switched by the P-MOSFET current switch in accordance with a pump-up control signal to provide a pump-up current. The width of the channel of the P-MOSFET current switch is substantially less than the sum of the widths of the channels of the P-MOSFETs of the P-MOSFET current mirror. The N-MOSFET current switch, in accordance with a pump-down control signal, switches a pump-down current which is sunk by the N-MOSFET current mirror. The width of the channel of the N-MOSFET current switch is substantially less than the sum of the widths of the channels of the N-MOSFETs of the N-MOSFET current mirror. The output node couples the P- and N-MOSFET current switches and receives the pump-up current and provides the pump-down current to provide a net charge pump signal suitable for use by a voltage controlled oscillator within a phase lock loop.

REFERENCES:
patent: 4745372 (1988-05-01), Miwa
patent: 4814726 (1989-03-01), Byrd et al.
patent: 5068628 (1991-11-01), Ghoshal
patent: 5153530 (1992-10-01), Takagi et al.
patent: 5164889 (1992-11-01), Ruetz
patent: 5220294 (1993-06-01), Ichikawa
patent: 5233314 (1993-08-01), McDermott et al.

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