Cascode LVTSCR and ESD protection circuit

Details Cascode LVTSCR and ESD protection circuit Cascode LVTSCR and ESD protection circuit

1998-04-23

1999-09-28

Sherry, Michael J.

Electricity: electrical systems and devices

Safety and protection of systems and devices

Transient responsive

361 56, H02H 322

Patent

active

059598204

ABSTRACT:
The cascode LVTSCR includes two or more SCRs (silicon controlled rectifiers). Each SCR has an anode, a control gate, and a cathode. The SCRs are cascoded in series by coupling the control gates of same type SCRs in common and coupling the cathode of one SCR to the anode of next SCR in series. The holding voltage of the cascode LVTSCR can be designed to be greater than VDD voltage level of the IC. Therefore, the cascode LVTSCR has no latchup problem in the CMOS IC's. The electrostatic discharge (ESD) protection circuit in the present invention includes a cascode LVTSCR (low-voltage triggering silicon controlled rectifier) with an anode and a cathode coupled between power supplies, and a detecting circuit coupled between the power supplies for detecting an electrostatic charge to trigger the control gates of the cascode LVTSCR for dissipating the electrostatic discharge. The ESD protection circuit including the cascode LVTSCR can sustain high ESD stress but without causing the latchup problem in the CMOS IC's.

REFERENCES:
patent: 4075510 (1978-02-01), Pascente
patent: 4571535 (1986-02-01), Gyugyi
patent: 5528188 (1996-06-01), Au et al.
patent: 5572394 (1996-11-01), Ker et al.
patent: 5754381 (1998-05-01), Ker

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