Cascode circuit and integrated circuit having it

Amplifiers – With semiconductor amplifying device – Including plural stages cascaded

Reexamination Certificate

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Details

C330S310000

Reexamination Certificate

active

07071786

ABSTRACT:
A cascode circuit includes a first field effect transistor which has a source terminal grounded, a second field effect transistor which has a source terminal connected to a drain terminal of the first field effect transistor, and a first capacitor connected between the source terminal of the first field effect transistor and a gate terminal of the second field effect transistor. The first field effect transistor and the second field effect transistor are cascode-connected successively. A capacitance value of the first capacitor is 0.01 to 10 times that between the gate and source terminals of the second field effect transistor.

REFERENCES:
patent: 5155449 (1992-10-01), Ito
patent: 5774792 (1998-06-01), Tanaka et al.
patent: 5939945 (1999-08-01), Thewes et al.
patent: 6137367 (2000-10-01), Ezzedine et al.
patent: 6515547 (2003-02-01), Sowlati
patent: 6-224647 (1994-08-01), None
patent: 3169775 (2001-03-01), None
Bruce M. Green, et al., “Cascode Connected AIGaN/GaN Hemt's on SiC Substrates”, IEEE Microwave and Guided Wave Letters, vol. 10, No. 8, Aug. 2000, pp. 316-318.

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