Wave transmission lines and networks – Long line elements and components – Switch
Patent
1981-01-30
1982-09-07
Nussbaum, Marvin L.
Wave transmission lines and networks
Long line elements and components
Switch
29577C, 29590, 29591, 333247, 357 51, H01P 115, H01P 1100, H01P 308, H01L 2198
Patent
active
043486517
ABSTRACT:
An N or N.sup.+ type semiconductor substrate has a P-type layer diffused therein to form a PIN junction that is etched out between adjacent mesas and filled in with glass to form adjacent diodes between top and bottom surfaces of the substrate. The bottom surface is metallized. The top surface carries a conducting layer interconnecting the adjacent P-type portions of the mesas. This conducting layer has end portions connected to a respective diode of end width and length joined by an intermediate portion of intermediate width and length. The end width and length is less than that of the intermediate width and length, respectively, so that the end portions present an inductive reactance at microwave frequencies between a respective diode and the intermediate portion, and the intermediate portion forms a transmission line with the conducting layer on the bottom surface having a characteristic impedance of 50 ohms while that of the transmission lines formed by each end portion and the conducting layer on the bottom surface is substantially 100 ohms.
REFERENCES:
patent: 3538465 (1970-11-01), Manning, Jr. et al.
patent: 3852794 (1974-12-01), Pearson et al.
patent: 4292643 (1981-09-01), Kellner et al.
Fleming et al.-"GaAs SAMP Device for Ku-Band Switching", IEEE Trans. on Microwave Theory and Techniques, vol. MTT-27, No. 12, Dec. 1979; pp. 1032-1035.
Alpha Industries Inc.
Hieken Charles
Nussbaum Marvin L.
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