Cascaded diode structure with deep N-well and method for...

Details Cascaded diode structure with deep N-well and method for... Cascaded diode structure with deep N-well and method for...

2005-09-06

2005-09-06

Tran, Thien F (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Tunneling pn junction device

C257S105000, C257S106000, C257S109000, C257S199000, C257S355000, C257S356000, C257S360000, C257S361000, C257S362000

Reexamination Certificate

active

06940104

ABSTRACT:
A cascaded diode structure with a deep N-well for effectively reducing the leakage current of the P-type substrate by floating the base of a parasitic transistor in the cascaded diode structure. The cascaded diode structure includes a P-type substrate, a deep N-well formed on the P-type substrate, a plurality of elemental diodes formed on the deep N-well, and a plurality of connecting parts for cascading the elemental diodes. Each elemental diode includes a P-well formed on the deep N-well, a heavily doped P-type region formed on the P-well, and a heavily doped N-type region formed on the P-well.

REFERENCES:
patent: 5616943 (1997-04-01), Nguyen et al.
patent: 6531744 (2003-03-01), Van Lieverloo
patent: 6537868 (2003-03-01), Yu
patent: 530405 (2001-08-01), None

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