Cascade sense amplifier for reading out data stored in semicondu

Details Cascade sense amplifier for reading out data stored in semicondu Cascade sense amplifier for reading out data stored in semicondu

1993-04-22

1994-09-06

Wambach, Margaret R.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307355, 307591, 307543, H03F 345, H03K 522

Patent

active

053451228

ABSTRACT:
A cascade sense amplifier includes section separated sense amplifiers, a cascade wiring and a main sense amplifier. The main sense amplifier has a capacitance regulation element provided at a base potential of input transistors constituting a data input end. The element is comprised of a metal oxide semiconductor (MOS) transistor for forming a capacitance corresponding to a potential V.sub.SS mainly forming a capacitance by the cascade wiring. A size of the element is determined in the manner that the base potential drop time of the transistors is equal to a potential drop time of the cascade wiring when a power source voltage V.sub.CC drops. Even though the power source voltage V.sub.CC drops, the transistors have no cut-off condition so as to prevent the read-out time from delaying. Especially, if the element is comprised of a MOS transistor, it is possible to use an extremely thin gate insulation layer as a dielectric, thereby suppressing an increase of a chip size.

REFERENCES:
patent: 4991141 (1991-02-01), Tran
IBM Tech Disc. Bul. "Charge-Sensitive Sense Amplifier" Crabtree et al., vol. 21 No. 9, Feb. 1979 pp. 3707-3709.

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