Carrier with a metal area and at least one chip configured...

Details Carrier with a metal area and at least one chip configured... Carrier with a metal area and at least one chip configured...

2005-03-08

2005-03-08

Williams, Alexander Oscar (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S676000, C257S703000, C257S700000, C257SE21505, C257SE23054, C257SE23072, C257SE23169, C257S701000, C257S702000, C257S771000, C257S773000, C257S772000, C257S762000, C257S765000, C148S033300, C156S278000

Reexamination Certificate

active

06864579

ABSTRACT:
A carrier has a metal area that is essentially composed of copper. A chip has a rear side metallization layer. A buffer layer, essentially composed of nickel and having a thickness of between 5 μm and 10 μm, is arranged on the metal area. The chip does not have a chip housing and is arranged on the metal area, which has been provided with the buffer layer, such that only one connecting medium is arranged between the rear side metallization layer of the chip and the buffer layer.

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