Active solid-state devices (e.g. – transistors – solid-state diode – Alignment marks
Reexamination Certificate
2011-08-23
2011-08-23
Nguyen, Khiem D (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Alignment marks
C257SE23179
Reexamination Certificate
active
08004097
ABSTRACT:
Methods for manufacturing an integrated wafer scale package that reduces a potential misalignment between a chip and a pocket of a carrier substrate. According to one aspect of the present invention, a method for manufacturing a semiconductor device includes a photoresist layer disposed on a carrier substrate, a chip placed onto a surface of the photoresist layer. The photoresist layer is patterned using the chip as a mask. The chip is removed from the photoresist layer after the patterning step. A pocket is formed in the carrier substrate, and the chip that was removed is placed into the pocket formed in the carrier substrate.
REFERENCES:
patent: 5704116 (1998-01-01), Gamota et al.
patent: 6057206 (2000-05-01), Nguyen et al.
patent: 6140707 (2000-10-01), Plepys et al.
patent: 2002/0014703 (2002-02-01), Capote et al.
Chen Howard Hao
Hsu Louis L.
F. Chau & Associates LLC
International Business Machines - Corporation
Nguyen Khiem D
Verminski, Esq. Brian P.
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