Carrier transport and collection in fully depleted semiconductor

Radiant energy – Ionic separation or analysis – Static field-type ion path-bending selecting means

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357 22, 357 24, 250370, H01L 2714, H01L 2980, H01L 2978, H01L 3100

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active

046880674

ABSTRACT:
A semiconductor charge transport device and method for making same, characterized by providing a thin semiconductor wafer having rectifying junctions on its opposing major surfaces and including a small capacitance ohmic contact, in combination with bias voltage means and associated circuit means for applying a predetermined voltage to effectively deplete the wafer in regions thereof between the rectifying junctions and the ohmic contact. A charge transport device of the invention is usable as a drift chamber, a low capacitance detector, or a charge coupled device each constructed according to the methods of the invention for making such devices. Detectors constructed according to the principles of the invention are characterized by having significantly higher particle position indicating resolution than is attainable with prior art detectors, while at the same time requiring substantially fewer readout channels to realize such high resolution.

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Gatti et al, "Semiconductor Drift Chamber . . . " 2nd Pisa Meeting on Advanced Detectors, Grosetto, Italy, Jun. 3-7, 1983.

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