Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1983-11-10
1984-09-18
Edlow, Martin H.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
357 83, 357 63, 357 41, 307306, 307245, H01L 2978
Patent
active
044727275
ABSTRACT:
A buried-channel MOSFET device 10 is cooled sufficiently to experience majority carrier freezeout in the channel region 30 (e.g. 10.degree. k.). It is appropriately fabricated and biased to form a buried-channel 40. When the gate 26 is pulsed, there appears in the buried channel 40 a transient conducting condition which lasts for on the order of 10.sup.-8 second or more and may therefore be used for subnanosecond switching functions. The switching energy needed for turning the device 10 on is very low, of the same order of magnitude as for Josephson junction devices. Turn-on is dependent mostly on the height of the switching pulse, rather than upon a voltage threshold relative to the source voltage. This makes possible a large scale integration of such devices with the same switching voltage as that required for a single device.
REFERENCES:
patent: 3500137 (1970-03-01), Schroen et al.
patent: 3502908 (1970-03-01), Christensen
patent: 3512012 (1970-05-01), Kosowsky et al.
patent: 3644803 (1972-02-01), Levi
patent: 4129880 (1978-12-01), Vinal
Crowder et al, "Five-Terminal High-Performance MOSFET with Electrically Controllable Channel Length," IBM Tech. Discl. Bull., vol. 19, No. 7, Dec. '76, 2787.
AT&T Bell Laboratories
Edlow Martin H.
Mintel William A.
Ulbrich Volker R.
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